Abstract
The multilayer mask is one of the key challenges for Extreme UV Lithography. Rene is working on imaging methods to quantitatively measure phase and amplitude on the mask. So far he has focused on measuring phase and amplitude roughness on mask blanks using an AIMS tool. The method presented uses through-focus images taken on the EUV microscope SHARP at LBNL to fit both the amplitude and phase roughness, information that can.t be captured using the standard methods, AFM and scatterometry. The method has additional nice properties in that it is relatively fast and can be used to calibrate some parameters of the tool.